STMicroelectronics introduces next-gen silicon carbide MOSFETs for electric vehicles

STMicroelectronics, a global semiconductor company, has introduced its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology.

This latest innovation sets new standards in power efficiency, density, and robustness, targeting both automotive and industrial markets. The technology is particularly optimized for traction inverters, a critical component of electric vehicle (EV) powertrains.

The Generation 4 SiC MOSFETs are designed to improve the energy efficiency and performance of EV traction inverters, particularly in 400V and 800V electric buses. These advancements are expected to benefit mid-size and compact electric vehicles, which are crucial for achieving mass market adoption. Additionally, the technology is suitable for high-power industrial applications, such as solar inverters, energy storage systems, and datacenter power supplies, contributing to more energy-efficient solutions.

STMicroelectronics has completed the qualification of its 750V class SiC devices and expects to complete the 1200V class by the first quarter of 2025. The company is committed to driving further advancements in SiC technology and plans to introduce additional innovations through 2027.

Marco Cassis, President of the Analog, Power & Discrete, MEMS and Sensors Group at STMicroelectronics, emphasized the company's focus on delivering high-performance SiC technology through its vertically integrated manufacturing strategy, supporting both electric mobility and industrial efficiency.

STMicroelectronics will present its technical advancements in SiC technology at the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2024, an industry event in Raleigh, North Carolina.